Comment on the Determination of the Midgap Density of States in Amorphous Semiconductors Using the Space?Charge?Limited?Current Method
Journal
physica status solidi (b)
Journal Volume
43
Journal Issue
7 B
Pages
695-701
Date Issued
2004
Author(s)
Abstract
Abstract It is pointed out that the determination of the midgap density of states in amorphous semiconductors using the space‐charge‐limited‐current method is reliable only when the density of states is less than 10 17 cm −3 eV −1 and the electrode spacing is in the order of μm. Beyond these restrictions the current will be affected by the Poole‐Frenkel effect which will distort the determination of density of states from current–voltage characteristics.
SDGs
Type
journal article