Broad-band monolithic GaAs-based HEMT diode mixers
Resource
Microwave Conference, 2000 Asia-Pacific
Journal
Microwave Conference, 2000 Asia-Pacific
Pages
-
Date Issued
2000-12
Date
2000-12
Author(s)
Deng, K.L.
Wu, Y.B.
Tang, Y.L.
Wang, H.
Chen, C.H.
DOI
N/A
Abstract
Broad-band monolithic diode mixers covering 17.5-33 GHz with different topologies are designed, fabricated and tested. The topologies under investigation include the singly balanced mixer with 90/spl deg/ and 180/spl deg/ coupler and the sub-harmonically pumped (SHP) mixer. These monolithic microwave integrated circuits are fabricated using a 0.2-/spl mu/m pseudomorphic HEMT foundry process on a 4-mil thick GaAs substrate, and thus the measurement results for each topology are evaluated on a fair basis. The SHP mixer, with a miniature size of 1.3 mm/spl times/1.1 mm, demonstrates 10-12 dB conversion loss at 17.5-33 GHz of RF with 2.5-GHz IF and both LO-to-RF, LO-to-IF isolations of both better than 25 dB. It outmatches the singly balanced approaches, as well as achieves rival performance compared with previously reported results at similar frequencies.
SDGs
Type
journal article
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