Improvement of Ta2O5-Based Conductive Bridge Random Access Memory with Embedded Nanoparticles
Date Issued
2016
Date
2016
Author(s)
Lu, Szu-An
Abstract
Conductive bridge random access memory (CBRAM), as a kind of resistive random access memory (RRAM), is one of the promising emerging memory technologies to meet the challenges of developing the next-generation high performance semiconductor memory. Among many material combinations, Ag/Ta2O5/Pt has the advantages of low operation voltage (<0.3 V), low power consumption (<20 μJ per cycle), and large on-off ratio (10^7). To improve the endurance and the uniformity issues, the Ag nanoparticles, fabricated by one-step annealing-free deposition, were embedded in the Ta2O5 memory layers. The SET voltage and its standard deviation were reduced by 37% and 42% respectively, and the endurance was increased at least 100%. The nanoparticle-embedded Ta2O5 CBRAM devices were proposed and studied, which have the promising memory characteristics and the potential for the further researches.
Subjects
tantalum pentoxide (Ta2O5)
silver nanoparticles
conductive bridge random access memory (CBRAM)
resistive random access memory (RRAM)
RF magnetron sputtering
Type
thesis
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