Dynamic carrier relaxation in InGaN/GaN multiple quantum well structures
Resource
Proceedings of SPIE 4643: 169-172
Journal
Proceedings of SPIE-The International Society for Optical Engineering
Journal Volume
4643
Pages
169-172
Date Issued
2002
Date
2002
Author(s)
Feng, Shih-Wei
Cheng, Yung-Chen
Chung, Yi-Yin
Lin, Yen-Sheng
Ma, Kung-Jeng
Chyi, Jen-Inn
Abstract
We report the fast and slow decay lifetimes of multi-component photoluminescence (PL) intensity decays in the time-resolved photoluminescence measurements at the room temperature and a low temperature (12K). The fast decay component was essentially due to carrier dynamics, that is, carrier transport from weakly localized to localized states. Such a carrier transport process results in extremely long PL decay time (up to almost 120 ns) for strongly localized states at the low temperature. At room temperature, because of thermal energy and hence carrier escape from strongly localized states, effective lifetimes becomes shorter. © 2002 SPIE · 0277-786X/02/$15.00.
Subjects
Carrier dynamics; Carrier transport; InGaN/GaN quantum well; Localized states
Other Subjects
Gallium nitride; Low temperature operations; Optical variables measurement; Photoluminescence; Photons; Relaxation processes; Semiconducting indium compounds; Semiconductor quantum wells; Carrier dynamics; Carrier relaxation; Carrier transport; Localized states; Carrier mobility
Type
journal article
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