Bismuth nanowire grown naturally using a sputtering system
Journal
Applied Physics Express
Journal Volume
6
Journal Issue
3
Date Issued
2013
Author(s)
Abstract
We report the growth of Bismuth (Bi) nanowires on glass substrates using a radio frequency (RF) sputtering system. The growth temperature and RF power were varied to study the growth mechanism of the nanowires. The scanning electron microscope (SEM)/transmission electron microscope (TEM) images of the samples under various growth conditions were taken to reveal the morphologies of the Bi nanowires and films. We found that the optimal conditions for growing Bi nanowires were 120-160 °C, 0.5W/cm2 (growth rate 40 Å/s), and 240s. © 2013 The Japan Society of Applied Physics.
Type
journal article