Fully Integrated High-power Multi-band CMOS Power Amplifier for Mobile Applications
Date Issued
2015
Date
2015
Author(s)
Hung, Shan-Tzu Sean
Abstract
LTE handset sales grow rapidly since it was announced by 3GPP in 2004. People in different countries adopt different LTE bands because there are 44 LTE bands. Therefore, it is an important issue for a handset device which is able to support multi-mode and multi-band mobile communication systems in order to satisfy the users in different countries. This thesis presents the CMOS power amplifiers (PAs) which are implemented in 0.13 μm and 90 nm CMOS technology. Due to the use of coupled L-shape power-combining transformer, it successfully minimizes the PA layout area while remaining high output power. The PA implemented in 0.13 μm CMOS technology has two stages with high power and high efficiency. The other implemented in 90 nm CMOS technology has one stage with high linearity. From the simulation, the PA implemented in 0.13 μm CMOS technology achieves a P_1dB of 33.863 dBm with PAE of 39.474 %, and a P_SAT of 34.719 dBm with PAE of 43.458 %, and transducer gain of 27.84 dB at 1.95 GHz. The 0.13 μm CMOS PA is able to support 16 QAM 20 MHz LTE Band1 (1920 MHz – 1980 MHz)、Band2 (1850 MHz – 1910 MHz)、Band25 (1850 MHz – 1915 MHz). From the simulation, he PA implemented in 90 nm CMOS technology achieves a P_1dB of 32.38 dBm with PAE of 39.85 %, and a P_SAT of 32.87 dBm with PAE of 40.53 %, and transducer gain of 17.21 dB at 1.95 GHz. The 90 nm CMOS PA is able to support 16 QAM 20 MHz LTE Band1 (1920 MHz – 1980 MHz)、Band2 (1850 MHz – 1910 MHz)、Band 3 (1710 MHz – 1785 MHz)、Band4 (1710 MHz – 1755 MHz)、Band9 (1749.9 MHz – 1784.9 MHz)、Band25 (1850 MHz – 1915 MHz).
Subjects
LTE
Power Amplifier
Power Combining Transformer
Coupled L-shape Transformer
Power Cell
Type
thesis