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  4. Nanostructured ZnO as an Antireflection Coating for Optoelectronic Devices
 
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Nanostructured ZnO as an Antireflection Coating for Optoelectronic Devices

Date Issued
2010
Date
2010
Author(s)
Chao, Yen-Chun
URI
http://ntur.lib.ntu.edu.tw//handle/246246/253723
Abstract
Recently, one-dimensional and quasi-one-dimensional nanostructures have attracted a great deal of attention due to their potential as building blocks for electronic and photonic novel devices. Moreover, ZnO is a potentially important material due to its electrical and optoelectronic characteristics. Nonetheless, the study on the morphologies of ZnO nanorods (NRs) on the reflectance was rarely addressed. In this work, length-controlled and alignment-controlled ZnO nanorod arrays (NRAs) on the Si(100) substrates were synthesized using the hydrothermal method. It was found that the reflectivity of Si substrates with ZnO NRAs was dramatically decreased over a wide range of the incidence wavelength. Besides, ZnO NRAs exhibit omnidirectional and polarization-insensitive AR characteristics. Finally, we apply the ZnO NRAs on the p-Si/n-ZnO photodiode. The responsivity of the Si/ZnO photodiode is enhanced at forward bias and reverse bias, which is considered to be due to reduced surface reflectance and nanostructure morphology.
Subjects
ZnO
nanorod
antireflection
hydrothermal process
phtodiode
Type
thesis
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ntu-99-R97941044-1.pdf

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