GaN on Si RF performance with different AlGaN back barrier
Journal
2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings
ISBN
9798350334166
Date Issued
2023-01-01
Author(s)
Hsieh, Chang Yan
Chen, Hui Yu
Tu, Po Tsung
Chen, Jui Chin
Yang, Hsin Yun
Yeh, Po Chun
Hsieh, De
Liu, Hsueh Hsing
Fu, Yi Keng
Sheu, Shyh Shyuan
Kuo, Hao Chung
Lo, Wei Chung
Chang, Shih Chieh
Abstract
In this paper, the DC and RF device performance of AlGaN/GaN high-electron-mobility transistors (HEMTs) with different AlGaN back barrier thickness has been studied. The test results of the HEMTs with 50 nm back barrier exhibit Idssat=640 mA mm gm=405 mS mm, and on/off ratio = 1.5 E+04. In small-signal operation, cut-off frequency FT FMAX=59/127 GHz are achieved, which gives a high value of ( FT × Lg)=14.7 GHz ×μ m among the reported GaN-on-Si devices.
Type
conference paper