Nanopower Oscillators with Temperature Compensation
Date Issued
2014
Date
2014
Author(s)
Chiang, Yu-Hsuan
Abstract
This thesis consists of two parts. The first part aims to design a submicrowatts and low temperature coefficient (TC) relaxation oscillator. In this oscillator, the transistors in the subthreshold region, the current-mode comparator, and the current-starving inverters are used to reduce the power of the relaxation oscillator. The current-starving inverters are biased by using the PTAT and CTAT current sources to release the temperature variations. The parallel/series composite resistor and the PTAT/CTAT current sources are also used to further reduce the temperature coefficient. The average temperature coefficient is 64.3ppm/°C for the temperature of -20~80°C, and the calculated power FOM is 0.78nW/kHz.
The second part implements the low TC current reference and curvature current source with different gate-oxide thickness mosfets to realize the oscillators with low TCs. Two oscillators of 1.4MHz and 28kHz are fabricated in a 0.18-μm CMOS process. For the 1.4MHz oscillator, its power is 615nW with a supply voltage of 1.2V. The measured average TC is 56.4ppm/°C for the temperature of -20~80°C. The calculated FOM1 and FOM2 are 124dB and 103dB, respectively. For the 28kHz oscillator, its power is 40.2nW with a supply voltage of 1.2V. The measured average TC is 95.5ppm/°C for the temperature of -20~80°C. The calculated FOM1 and FOM2 are 119dB and 92dB, respectively.
Subjects
低功耗
振盪器
溫度補償
Type
thesis
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