Physical mechanism of HfO2-based bipolar resistive random access memory
Journal
International Symposium on VLSI Technology, Systems, and Applications
Pages
110-113
Date Issued
2011
Author(s)
Abstract
The (anode) TiN/Ti/HfO 2 /TiN (cathode) resistive random access memory (RRAM) has shown yield ~100%. Its simple metal-insulator-metal (MIM) structure exhibits great potential for an embedded BEOL memory compatible with the high-k/metal gate CMOS process. There have been many theories of RRAM physical mechanism in the literature. This paper focuses on HfO 2 -based RRAM and describes a complete physical mechanism from forming, SET/RESET, current conduction, to explanations of various observed phenomena including multilevel, cell size scaling, resistance fluctuation, soft error, and non-abrupt RESRT process. Finally, suggestions for device optimization are given based on the physical model.
Type
conference paper