All silicon carbide based p-i-n photovoltaic solar cells with conversion efficiency enhanced by detuning the composition ratio of i-SixC 1-x layer
Journal
Conference Record of the IEEE Photovoltaic Specialists Conference
Pages
1343-1345
Date Issued
2013
Author(s)
Abstract
All silicon carbide (SixC1-x) based p-i-n photovoltaic solar cells (PVSCs) is demonstrated by growing the non-stoichiometric Si-rich SixC1-x films with plasma enhanced chemical vapor deposition (PECVD). With decreasing the CH 4/(CH4+SiH4) fluence ratio from 50% to 30%, the Si/C composition ratio of the Si-rich SixC1-x film increases from 1.99 to 2.78. For the Si-rich Si0.74C0.26 film, the broadband absorption spectrum shows the highest optical absorption coefficient of up to 1.9×105 cm-1. The ITO/p-Si xC1-x/i-SixC1-x/n-Si xC1-x/Al solar cell provides the conversion efficiency and filling factor enhancing from 1.41% to 2% and from 23.1% to 25.6%, respectively, by enlarging the Si/C composition ratio of i-SixC 1-x layer from 1.99 to 2.78. © 2013 IEEE.
SDGs
Other Subjects
Absorption spectroscopy; Conversion efficiency; Electromagnetic wave absorption; Film growth; Photovoltaic cells; Plasma enhanced chemical vapor deposition; Silicon carbide; Solar cells; Vapors; Broadband absorption spectra; Composition ratio; Detunings; Filling factor; Non-stoichiometric; Optical absorption coefficients; Photovoltaic solar cells; Plasma enhanced chemical vapor depositions (PE CVD); Silicon
Type
conference paper