The state-of-the-art iiuise figires of2.17 dB and 3.0 dB at 5 GHr
band from monolithic CMOS I,NA’s with 10 mW dissipation on
thin (- 20 pin) and Iii)rnial (750pm) substrata are prescntcd.
ISxceIlcnt Inpui rctiirn loss ( S I , ) or -41 dB. high of -R.3 dRm
and largc llP3 of 0.3 dDin werc also obtaincd. The ehcellenl
performance 01 thr 1.NA.s is attributed to the methodology wc
developed.
