Nanostructure Fabrication by E-beam Lithography: Field Emitter Array and Line Shape Pattern
Date Issued
2011
Date
2011
Author(s)
Wen, Kai-Chiang
Abstract
E-beam lithography is frequently used for nanostructure fabrication. Instead of photolithography which is difficult to meet the demand of scaling down, E-beam lithography provides high resolution for building nanotechnology architecture. By using E-beam lithography, the line width can be shrunk below 100 nm, thus being helpful for advanced studies of IC manufacturing and nanostructure fabrication.
In this work, the studied nanostructures are field emitter array (FEA) and line shape pattern of the positive photoresist: FEA is fabricated by the E-beam lithography, reactive ion etching (RIE) and metal evaporation. After E-beam lithography and RIE, the silicon tips are formed, and then deposited with silver and aluminum to increase electrical conductivity. And then the field emission current is measured by applying high voltage. The line shape pattern is designed in pursuit of narrow line width. Here the optimization of parameters of E-beam lithography and proximity effect are discussed with line width and spacing analysis. In the end, by increasing the spin speed of coating, the thickness of photoresist is reduced to decrease aspect ratio.
Subjects
E-beam Lithography
Field Emitter Array (FEA)
Proximity Effect
Type
thesis
File(s)![Thumbnail Image]()
Loading...
Name
ntu-100-R98943072-1.pdf
Size
23.32 KB
Format
Adobe PDF
Checksum
(MD5):3f56580f4ae03669e2a8d048ab6bfc0b