Skip to main content
English
中文
Log In
Log in
Log in with ORCID
NTU Single Sign On
Have you forgotten your password?
Home
College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Characterization of 1/f noise vs. number of gate stripes in MOS transistors
Details
Characterization of 1/f noise vs. number of gate stripes in MOS transistors
Journal
IEEE International Symposium on Circuits and Systems
Journal Volume
2
Date Issued
1999
Author(s)
Chen
Hsin-Shu
Ito
Akira
HSIN-SHU CHEN
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-0032738969&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/350035
Type
conference paper