Skip to main content
English
中文
Log In
Log in
Log in with ORCID
NTU Single Sign On
Have you forgotten your password?
Home
College of Science / 理學院
Applied Physics / 應用物理研究所
Cubic HfO2 Doped with Y2O3 for Advanced Gate Dielectrics by MBE.
Details
Cubic HfO2 Doped with Y2O3 for Advanced Gate Dielectrics by MBE.
Journal
APS Meeting Abstracts
Journal Volume
1
Pages
41004
Date Issued
2006
Author(s)
Yang, ZhiKai
Lee, WC
Chang, Pen
Huang, MoLin
Huang, Yi Lin
MINGHWEI HONG
Huang, CM
Hsu, CH
Kwo, Raynien
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/323215
Type
conference paper