(AlxGa1-x)0.5In0.5P/ In0.15Ga0.85As (x=0, 0.3, 1.0) heterostructure doped-channel FETs for microwave power applications
Journal
IEEE Transactions on Electron Devicess
Journal Volume
48
Journal Issue
12
Pages
2906-2910
Date Issued
2001-12
Author(s)
Type
journal article