High-Frequency Electrical and Optical Characterization of Semiconductor Lasers
Date Issued
2005
Date
2005
Author(s)
Wang, Shao-Fang
DOI
en-US
Abstract
Diode laser have become an important commercial component. They are used in a wide variety of applications ranging from the readout sources in compact disk players to the transmitters in optical fiber communication systems.
There are various measurement techniques to explore different properties of laser diodes. One of them is the high-frequency electrical characterization which can provide us lots of useful information. For example, we can measure the relaxation oscillation frequency of laser diodes through impedance characterization. This technique is elegant and proves to be an easier way than direct measurement of optical modulation bandwidth. We can also investigate laser modulation bandwidth from the transient analysis, but again the experimental setup is more complicated.
In this paper, we investigate the properties laser diodes throught electrical characterization and build up their equivalent circuit models. We also discuss the limit of impedance measurement and try further the direct optical measurement of modulation bandwidth. These results will be compared with those of laser transient experiments.
Furthermore, we discuss various important diode parameters, such as differential diode resistance, ideality factor, and the carrier time constants, and their corresponding meaning in the circuit model.
Subjects
半導體雷射
等效電路
鬆弛震盪頻率
阻抗
調變響應
equivalent circuit model
modulation response
relaxation oscillation frequency
optical response
semiconductor lasers
impedance
Type
thesis
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