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  4. Phosphorous concentration effect on Sn4Ag0.5Cu solder reactions and mechanical property under high strain rate
 
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Phosphorous concentration effect on Sn4Ag0.5Cu solder reactions and mechanical property under high strain rate

Date Issued
2014
Date
2014
Author(s)
Chen, Hsien-Ta
URI
http://ntur.lib.ntu.edu.tw//handle/246246/262088
Abstract
Lead-free electronic package use the Sn–Ag–Cu (SAC) alloy as one of the environmental friendly solder. Phosphorous can inhibit oxidation of solder. However, the mechanical property and interfacial reaction may be influenced due to the P-addition. In this study, the interfacial reactions and high speed ball shear test of 30,60,100 ppm P-doped and undoped Sn4Ag0.5Cu solders with electrolytic Ni–Au were investigated. The morphology of the interface and the IMC composition were analyzed by scanning electron microscopy and transmission electron microscopy (TEM). The high speed shear properties of the interface were measured using an Instron Microimpact system MS5345B-01 instrument. The results showed that when 30,60,100ppm P-dopped in the solder, the Ni3SnP phase existed in (Cu,Ni)6Sn5 IMC layer. This Ni3SnP phase might suppressed the growth of the IMC layer effectively. For high speed ball shear test, P content has no critical effect on mechanical property in SAC405/Ni system. These phenomenon will be discussed in the thesis.
Subjects
磷濃度
無鉛銲料
界面反應
高速推球
機械性質
Type
thesis
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ntu-103-R01527018-1.pdf

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(MD5):91043444c2e1556286393edf11dd5533

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