High performance GaInP/GaAs HBT radio frequency integrated circuits at 5 GHz
Journal
Asia-Pacific Microwave Conference Proceedings, APMC
Journal Volume
2
Date Issued
2005
Author(s)
Abstract
Several high performance GaInP/GaAs heterojunction bipolar transistor (HBT) radio frequency integrated circuits (RFICs) implemented by our research group are reviewed in this paper. These demonstrated RFICs include source inductively degenerated cascode low noise amplifiers with inter-stage matching, shunt-series shunt-shunt dual feedback wideband amplifiers, broad band Gilbert down-conversion micromixer, Gilbert down-conversion mixers with poly-phase filters for image rejection, Gilbert up-conversion mixers with output LC current mirror and quadrature VCOs. In addition, a method to extract the GaInP/GaAs HBT device structure is also developed.
SDGs
Type
conference paper