Hole Confinement and 1/ f Noise Characteristics of SiGe Double-Quantum-Well p-Type Metal–Oxide–Semiconductor Field-Effect Transistors

Resource

Japanese Journal of Applied Physics Part1 45 (5A): 4006-4008

Journal

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Journal Issue

45

Pages

4006-4008

Date Issued

2006

Date

2006

Author(s)

Lin, Yu Min

Wu, San Lein

Chang, Shoou Jinn

Chen, Pang Shiu

URI

Type

journal article