Enhanced Transient Behavior in MIS(p) Tunnel Diodes by Trench Forming at the Gate Edge
Journal
IEEE Transactions on Electron Devices
Journal Volume
68
Journal Issue
9
Pages
4189-4194
Date Issued
2021
Author(s)
Lin J.-Y
Abstract
In this article, a new type of metal-insulator-semiconductor (MIS) tunnel diode (TD), trench MIS TD, was investigated. From the current-voltage characteristics, memory retention, and memory endurance measurements, we found that the trench MIS TDs not only have lower reverse bias current, but also show stronger transient current compared to traditional planar structure MIS TDs. For example, in the 1000-cycle memory endurance test, we observed a 25 times larger current window (CW) in trench devices than the CW of planar devices. We attribute the lower reverse bias current to the fewer minority carriers (electrons) in trench MIS TDs, which is supported by the high-frequency capacitance-voltage (C-V) measurement. As for the enhanced transient behavior of trench MIS TDs, we proposed a mechanism based on the understanding of fewer minority carriers in trench devices to explain our observation. Eventually, we examined the effect of different equivalent oxide thicknesses (EOTs) on the CW and found that the trench devices have better CW in a wide EOT range. Because of the enhanced transient behavior leading to better memory CW, trench MIS TDs have the potential to serve as memory devices. ? 1963-2012 IEEE.
Subjects
Metal-insulator-semiconductor (MIS)
transient behavior
trench structure
tunnel diode (TD)
Bias voltage
Capacitance
Charge carriers
Current voltage characteristics
Metal insulator boundaries
Tunnel diodes
High frequency capacitance
Mechanism-based
Memory retention
Metal-insulator-semiconductors
Minority carrier
Planar structure
Transient behavior
Transient current
MIS devices
SDGs
Type
journal article