Studies of Solution-Processed Oxide Semiconductors, Conductors and Thin Film Transistors
Date Issued
2010
Date
2010
Author(s)
Hu, Ching-Chien
Abstract
Transparent oxide semiconductors (TOSs) for display applications have drawn much attention in recent years due to their high mobility sufficient to drive active matrix organic light emitting diodes (AMOLEDs), good environmental stability, high transparency in the visible range for high aperture ratio, etc. However, most oxide-semiconductor-based TFTs reported to date were fabricated by vacuum deposition techniques, such as magnetron sputtering deposition, pulsed laser deposition (PLD), and thermal evaporation, and thus are rather high cost. Solution processes offer many advantages, such as simplicity, low cost, large area fabrication. Moreover, solution processed deposition methods such as screen printing, imprinting, and ink-jet printing, etc. offer the possibility of direct patterning of thin films which could replace the traditional photolithographic technique.
In this thesis, oxide thin film transistors (OTFTs) with double channel layers and high performance zinc tin oxide (ZTO) TFTs were fabricated by the simple and low-cost solution process. Fabricated TFTs show a high mobility up to 13-15 cm2/V-s, a subthreshold slope down to 0.56 V/decade, and a on-off ratio of greater than 106. SEM and TEM images showed that different morphologies resulted from different annealing processes of oxide films, affecting the TFT performances.
In addition, we also deposited oxide conductors or semiconductors by the ink-jet printing process to fabricate the source/drain or channel layer for OTFTs. Workable TFTs had been obtained. Performances of TFTs may be further improved by further studying the printing and ink conditions.
Subjects
oxide semiconductors
thin film transistors
solution processing
zinc tin oxide
ink-jet printing
Type
thesis
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