Enhancing Charge Transport and Fast Non‐Volatile Memory in 2D Tin‐Based Perovskite Transistors through Porphyrin‐like Additives
Journal
Advanced Functional Materials
ISSN
1616-301X
1616-3028
Date Issued
2025-07-28
Author(s)
Nieh, Chia‐Hsun
Kao, Yu‐Chi
Sun, Yi‐Hsuan
Yu, Ming‐Hsuan
Chao, I‐Hsiang
Lin, Bi‐Hsuan
Chu, Chih‐Wei
Abstract
Hybrid metal halide perovskite transistors are attracting increasing attention due to their promising optoelectronic properties and potential applications in next-generation electronic devices. However, the stability and charge transport limitations of tin (Sn)-based halide perovskites (THPs) remain significant challenges. In this study, we introduce 2-thiophene-ethylammonium (TEA) as an A-site cation in 2D THP field-effect transistors (FETs) to achieve better energy level alignment and device performance. Next, phthalocyanine derivatives, phthalocyanine (H2Pc) and Sn phthalocyanine (SnPc), are introduced as functional additives to stabilize the perovskite structure and mitigate Sn2⁺ oxidation. The results show that the addition of these additives greatly improves the FET performance, with a hole mobility of 3.72 (H2Pc) and 4.40 cm2 V−1 s−1 (SnPc), surpassing the pristine TEA2SnI4 device. Moreover, the potential of these perovskite transistors for photomemory applications is also demonstrated, where they exhibit stable and nonvolatile memory effects under multi-wavelength (365, 405, and 530 nm) optical stimuli. These devices can maintain memory retention even after fast light stimulation (0.001 s), highlighting their potential for memory computing applications. This work provides an integrated strategy to improve the stability, charge transport, and optoelectronic function of Sn-based perovskite transistors.
Subjects
2D tin halide perovskite
additive engineering
DFT calculation
photomemory
Publisher
Wiley
Type
journal article