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College of Science / 理學院
Applied Physics / 應用物理研究所
High performance self-aligned inversion-channel MOSFETs with In 0.53 Ga 0.47 As channel and ALD-Al 2 O 3 gate dielectric
Details
High performance self-aligned inversion-channel MOSFETs with In 0.53 Ga 0.47 As channel and ALD-Al 2 O 3 gate dielectric
Journal
Device Research Conference, 2009
Pages
83-84
Date Issued
2009
Author(s)
Chiu, HC
Chang, P
Huang, ML
Lin, TD
Chang, YH
Huang, JC
Chen, SZ
Kwo, J
Tsai, Wen-Ru
MINGHWEI HONG
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/349422
Type
conference paper