Investigation of germanium-tin alloy optoelectronics
Date Issued
2015
Date
2015
Author(s)
Huang, Ssu-Hsuan
Abstract
Infrared light detectors are widely used in industrial inspection, night vision, military, biomedical and other purposes. Recently, with the development of Internet of Things, infrared light detectors which are a part of monitor systems are also important for smart home. In 2-3 micro meter wavelength of light which easily penetrates water vapor in the air can be detected by the infrared photodetector at the long distance in the bad weather. Germanium (Ge) has lots of benefits in group IV materials. For example, germanium has higher electron mobility and smaller energy difference between the direct and the indirect energy bandgaps. Currently, materials used in focal plane array (FPA) have lots of kinds, such as: CdZnTe, HgCdTe (MCT), etc. In the near infrared wavelength, InGaAs is a main material as an active layer. It is difficult to cover all infrared region. We can use germanium-tin (GeSn) FPA to cover all infrared wavelength. In this study, we add tin into Ge to form GeSn grown by molecular beam epitaxy (MBE) and fabricate PIN photodetectors. We investigate the temperature dependence of responsivity for Ge0.975Sn0.025 photodetector and research for its characteristics. On this basis, we eventually want to make GeSn FPA used in the near-infrared region .
Subjects
germanium tin alloys
direct energy gap
photodetectors
responsivity
Type
thesis
File(s)![Thumbnail Image]()
Loading...
Name
ntu-104-R02943113-1.pdf
Size
23.32 KB
Format
Adobe PDF
Checksum
(MD5):f69f29969d6263f05a97e8021ebc658d