Crossover from Efros-Shklovskii to Mott Variable Range Hopping in Amorphous Thin NixSi1-x Films
Journal
Chinese Journal of Physics
Journal Volume
52
Journal Issue
1
Pages
251-261
Date Issued
2014
Author(s)
Abstract
The temperature dependence of the electrical conductivity of insulating amorphous Ni(subscript x)Si(subscript 1-x) alloys is studied in the temperature range 1-160 K. At low temperatures, Efros-Shklovskii (ES) variable range hopping (VRH) is observed. This is assumed to occur because of the creation of the Coulomb gap (CG) in the vicinity of the Fermi level. With increasing temperature, the CG vanishes and the measured conductivity can be described by the Mott VRH model, where the density of states is constant. The criterion of the crossover ES from to Mott VRH is assessed by extracting the related parameters.
Type
journal article