Polishing effect of the plasma on the growth of YBa2Cu3O7-delta films by radio frequency sputtering
Journal
Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films
Journal Volume
20
Journal Issue
2
Pages
441-446
Date Issued
2002
Author(s)
Abstract
The polishing effect of the plasma on the growth of YBa2Cu3O7-δ films by radio frequency sputtering was discussed. It was observed that when the substrates were in the influence range of the plasma, the negative oxygen ions resputtered the mobile atoms on the surface of films back into the plasma. The results showed that when the separation distances and angle between the heater and the gun were in the suitable range, the negative oxygen ions provided a polishing effect which suppressed the growth of precipitates without slowing down the growth of grains, thereby yielding a smooth and precipitate free film.
Type
journal article