Nonvolatile and Volatile Memory Fusion of Antiferroelectric-like Hafnium–Zirconium Oxide for Multi-Bit Access and Endurance >1012 Cycles by Alternating Polarity Cycling Recovery and Spatially Resolved Evolution
Journal
ACS Applied Materials & Interfaces
Journal Volume
17
Journal Issue
9
Start Page
14342
End Page
14349
ISSN
1944-8244
Date Issued
2025-02-20
Author(s)
Cheng-Hong Liu
Kuo-Yu Hsiang
Zhi-Xian Li
Fu-Sheng Chang
Zhao-Feng Lou
Jia-Yang Lee
Pin Su
Tuo-Hung Hou
Abstract
The fusion of volatile and nonvolatile memory within a complementary-dynamic random-access memory (C-DRAM) in one cell is proposed with antiferroelectric-like hafnium-zirconium oxide with dual function characteristics of DRAM and storage class memory in the memory hierarchy. Atomic-resolution spherical aberration-corrected scanning transmission electron microscopy is employed to directly reveal the insights of phase evolution by utilizing diffractograms to determine lattice parameters. Storage-data-transfer-cycling-recovery with an alternating access scheme is introduced due to the characteristic of independent domains to exhibit multilevel states. Remanent polarization (Pr) can be restored, and 34 periods (3 × 1010 cycles/period) to accumulate 1.02 × 1012 switching cycles are demonstrated. The proposed method is effective in prolonging the endurance and evaluating the spatially resolved evolution of polarization.
SDGs
Publisher
American Chemical Society
Type
journal article