Piezoelectric field effect transistor (PEFET) using In0.2Ga0.8As/Al0.35Ga0.65As/In0.2Ga0.8A s/GaAs strained layer structure on (111)B GaAs substrate

Resource

Electronics Letters

Journal

Electronics Letters

Pages

-

Date Issued

1994-05

Date

1994-05

Author(s)

Lu, S.S.

Huang, C.L.

DOI

0013-5194

URI

Type

journal article

File(s)

Name

00289246.pdf

Size

306.98 KB

Format

Adobe PDF

Checksum

(MD5):d8fca70361a24eb1ddb7ab45b559583a