Plasmonic Enhancement of Raman Scattering and Photoluminescence on Anodic Aluminum Oxide Template
Date Issued
2014
Date
2014
Author(s)
Lee, Yen-Hui
Abstract
Atomic layer deposition (ALD) is an excellent deposition technique that controls the film’s thickness in the monolayer precision. Hexgonal pore arrays can be produced by anodic aluminum oxide(AAO) in a long range area and with an inexpensive electrochemical anodization process. Combining the two techniques above, one can fabricate the substrates for surface-enhanced raman scattering(SERS) and surface-enhanced luminescence(SEL). In this research, how the anodization voltage and temperature affect the pore size and distribution is discussed. We also study the relationship between the pore size and the intensity of SERS and SEL. In this research, we evaporate 40nm Ag onto AAO as a SERS substrate and use ALD to deposit TiO2 ultrathin film. The detection of 2nm TiO2 raman scattering is achieved. In order to investigate the relationship between the pore size and the SERS intensity, we use ALD to deposit Al2O3 (25cycles、50cycles、100cycles) and reduce the pore size. The greatest enhancement of raman scattering signal is found with 50cycles deposition of Al2O3. Following with the structure above, we substitute TiO2 with ZnO and measure the photoluminescence spectrum. The greatest enhancement of photoluminescence is also with 50cycles Al2O3.
Subjects
Atomic layer deposition
Anodic aluminum oxide
Localized surface plasmon resonance
TiO2
ZnO
Surface enhanced raman scattering (SERS)
Surface enhanced luminescence (SEL)
Type
thesis
File(s)![Thumbnail Image]()
Loading...
Name
ntu-103-R01527041-1.pdf
Size
23.54 KB
Format
Adobe PDF
Checksum
(MD5):f2924cb0cb587117217be05663868cd5