Numerical Analysis Optical Polarization Anisotropy of Tensile Strained InGaN/AlInN Quantum Wells
Date Issued
2010
Date
2010
Author(s)
Dang, Po-Yuan
Abstract
In this thesis, we study the optical characteristics and polarization anisotropy of the tensile strained polar c-plane InGaN/AlInN quantum wells with zero internal polarization field. The influence of different alloy compositions of the quantum well and barrier, quantum well widths, and injection carrier densities are discussed in detail. The developed self-consistent Poisson and 6x6 k·p Schrodinger solver has been use for studying the band structure and light emitting characteristics. We find that if the quantum well is under the tensile strain, the |Z>-like state will be lifted up, the topmost subband of valence band is dominated by the |Z> state. Therefore, the emitted light will be mainly z-polarized (TM mode). In addition, with a particular aluminum composition of the AlInN alloy as the barrier for the tensile strained InGaN quantum well, it is possible to reduce quantum-confined Stark effect and improve the spontaneous emission rate. Our results show that the tensile strained InGaN quantum well on AlInN barrier has much larger optical gain and lower threshold carrier density compared to the conventional InGaN/GaN system. The tensile strained InGaN/AlInN quantum wells have a potential to be the TM mode light source for edge emitting laser diodes with the photonic crystal cavity made by nanorod arrays.
Subjects
InGaN
AlInN
c-plane
TM mode
laser diodes (LDs)
tensile strain
Poisson equation
Schrodinger equation
k·p method
polarization ratio
spontaneous emission
optical gain
quantum well (QW)
Type
thesis
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