Shubnikov-de Haas oscillations of two-dimensional electron gas in an InAsN/InGaAs single quantum well
Journal
Semiconductor Science and Technology
Journal Volume
17
Journal Issue
9
Pages
999-1003
Date Issued
2002
Author(s)
Hang, D.R.
Huang, C.F.
Hung, W.K.
Chen, J.C.
Yang, H.C.
Shih, D.K.
Chu, T.Y.
Abstract
We present the first investigation of Shubnikov–de Haas (SdH) oscillations of two-dimensional electron gas formed in an InAsN/InGaAs single quantum well (QW) grown on an InP substrate using gas source molecular beam epitaxy and a radio-frequency (rf) plasma nitrogen source. The photoluminescence (PL) peak energy of the InAsN/InGaAs QW decreases compared with that of InAs/InGaAs QW. This agrees with the bowing effect due to the incorporation of nitrogen atoms. The nitrogen content can be estimated to be 0.4% using the PL peak positions as well as x-ray diffraction. From the SdH oscillations, the carrier concentration is 2.85 × 1011 cm−2 and the effective mass is 0.1 ± 0.01m0. The enhancement of the effective mass is mainly due to the incorporation of the nitrogen atoms in the InAs lattice, which is consistent with a recent study on InAsN bulk alloys. The large increase of the effective mass cannot be explained by the simple band anticrossing model. In addition, we observe a temperature-independent magnetoresistivity at a critical magnetic field. Our analysis supports the fact that the value of the critical exponent in the quantum Hall effect is not universal.
SDGs
Type
journal article