Ka-band monolithic GaAs PHEMT circuits for transceiver applications
Resource
Microwave Conference, 2000 Asia-Pacific
Journal
Microwave Conference, 2000 Asia-Pacific
Pages
-
Date Issued
2000-12
Date
2000-12
Author(s)
DOI
N/A
Abstract
This paper presents the development of a one-stage and a two-stage Ka-band monolithic LNA for commercial wireless communication applications. The monolithic microwave/millimeter-wave integrated circuits (MMICs) are fabricated with a 0.2-μm pseudomorphic (PM) GaAs-based HEMT technology, carried out by commercially available foundry. The one-stage amplifier demonstrated a measured small signal gain of 9.5 dB with a noise figure (NF) of 2.7 dB at 28 GHz, while the two-stage amplifier has a measured gain of 17 dB with 3.3 dB NF at 28 GHz. Due to fabrication with the commercial foundry process, these MMICs have the potential for mass production.
SDGs
Other Subjects
High electron mobility transistors; Monolithic microwave integrated circuits; Semiconducting gallium arsenide; Wireless telecommunication systems; Low noise amplifiers (LNA); Microwave amplifiers
Type
journal article
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