Germanium Channel MOSFETs and Strain-Induced effects on Silicon MOS Capacitor
Date Issued
2006
Date
2006
Author(s)
Tseng, Chih-Hung
DOI
en-US
Abstract
In this thesis, three important topics for discussion for advancement of metal-oxide-semiconductor field-effect transistors (MOSFETs) technology were studied, which are germanium channel Schottky-barrier MOSFETs, high-k dielectrics, and strain-induced effects.
Germanium channel was implemented by using Si-cap/epi-Ge/Si substrate and Platinum (Pt) was deposited as metal Schottky-barrier source/drain of p-type MOSFETs. The devices were fabricated by one mask process and there were some elementary results in experiment. Some useful concepts and adjustments were also provided to improve the performance of the process.
Hafnium oxide (HfO2) and hafnium-silicate (HfxSi1-xO2) were the materials for research about the electrical properties of high-k dielectrics. They fill the request about lower leakage current at the same equivalent oxide thickness (EOT) as compared with SiO2. The dielectric constant increases with the increase of Hf concentration. The C-V curve of growing HfO2 on the Si-cap/epi-Ge/Si substrate shows a shoulder to prove holes confinement in epi-Ge quantum well.
We brought up a mechanical setup to apply external tensile strain. By measuring flat-band voltage shift of MOS capacitor under strain, the reduction of conduction band edge and the upward shift of valence band edge were obtained.
Subjects
鍺
場效電晶體
應變力
Germanium
MOSFET
high-k
strain
Type
thesis
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