Digital Logic and Asynchronous Datapath with Heterogeneous TFET-MOSFET Structure for Ultralow-Energy Electronics
Journal
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Date Issued
2020
Author(s)
Abstract
The tunnel field-effect transistor (TFET) is a promising solution for high energy-efficient circuits. Based on the band-to-band tunneling (BTBT) condition, fast switching characteristic with a steep subthreshold swing (SS) in the ultralow-voltage operation is feasible. Our prior work has demonstrated that the SS and ON-state current can be improved without leakage current penalty through the usage of SiGe low-bandgap material in the epitaxial tunnel layer (ETL). ETL-TFET is highly compatible with the CMOS process, enabling heterogeneous integration of TFET and MOSFET in the same technology. In this work, the circuit performance of ETL-TFET and fully depleted SOI (FDSOI) MOSFET is evaluated and compared in terms of energy and delay metrics. By combining the advantages of TFET and MOSFET, heterogeneous pMOS-NTFET dynamic logic gates are proposed. The pMOS-NTFET-based logic gates demonstrate the lowest energy consumption than other realizations. Asynchronous datapath is leveraged to combat the timing variations in the ultralow-voltage region. A 20.9%-33.9% energy reduction is achieved compared with the conventional MOSFET counterpart. © 2014 IEEE.
Subjects
Band-to-band (BTBT) tunneling; epitaxial tunnel layer (ETL) tunnel field-effect transistor (TFET); heterogeneous integration; low-energy logic; SiGe low-bandgap material
SDGs
Other Subjects
Computer circuits; Delay circuits; Drain current; Electric network analysis; Energy efficiency; Energy gap; Energy utilization; Logic gates; Si-Ge alloys; Silicon on insulator technology; Tunnel field effect transistors; Band to band tunneling; Circuit application; Circuit performance; Fully depleted SOI; Heterogeneous integration; Steep subthreshold swings; Timing variations; Tunnel field-effect transistors (TFET); MOSFET devices
Type
journal article