Probing the electronic structures of III-V-nitride semiconductors by x-ray photoelectron spectroscopy
Journal
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Journal Volume
22
Journal Issue
3
Pages
1491-1494
Date Issued
2004-06
Author(s)
Other Subjects
Binding energy; Chemical bonds; Heterojunctions; Metallorganic chemical vapor deposition; Molecular beam epitaxy; Semiconducting gallium arsenide; Semiconducting indium gallium arsenide; Sputtering; Synchrotron radiation; Synchrotrons; X ray photoelectron spectroscopy; Bonding configurations; Electronegativity; Short range orders (SRO); Vertical cavity surface emitting lasers (VCSEL); Nitrides
Type
journal article