3510-V 390-mΩ · cm2 4H-SiC lateral JFET on a semi-insulating substrate

Journal

IEEE Electron Device Letters

Journal Volume

30

Journal Issue

9

Pages

957-959

Date Issued

2009

Author(s)

Huang, C.-F.

Kan, C.-L.

Wu, T.-L.

Lee, M.-G.

Liu, Y.-Z.

Lee, K.-Y.

Zhao, F.

DOI

10.1109/LED.2009.2027722

URI

http://www.scopus.com/inward/record.url?eid=2-s2.0-69949156070&partnerID=MN8TOARS

http://scholars.lib.ntu.edu.tw/handle/123456789/346476

Type

journal article