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  4. Development of Micro-resonator and Dual-function Optical Device Using the DRIE/SOI Process
 
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Development of Micro-resonator and Dual-function Optical Device Using the DRIE/SOI Process

Date Issued
2009
Date
2009
Author(s)
Shen, Hsin-Hong
URI
http://ntur.lib.ntu.edu.tw//handle/246246/187141
Abstract
In this work, two types of micromachined devices, a micro-resonator and a dual-functioned optical device, are developed by using MEMS techniques. The proposed resonator is used for the application of fast-scanning radio-frequency scanning tunneling microscopy (RFSTM), and the proposed optical device is utilized for the applications in optical communications. The resonator is composed of comb-drive actuators, folded-beam suspensions, and a cantilever. The device is able to generate a large displacement with a desired resonant frequency. On the other hands, the dual-functioned optical device, which consists of four movable mirrors, bi-stable mechanisms, and electrothermal V-beam actuators, can simultaneously perform the capabilities of optical switching and optical attenuating, and thus can reduce the system complexity and the cost. For optical switching, the movable mirrors are driven and latched by the bi-stable mechanisms integrated with electrothermal V-beam actuators. For optical attenuating, the movable mirrors are driven by using the electrothermal effect.oth of the proposed micro-resonator and dual-functioned optical device can be easily realized by using the deep reactive ion etching (DRIE) on a SOI (Silicon-On-Insulator) wafer. The resonator is actuated by applying a square-wave driving voltage on the device. The amplitude and the frequency of the driving square-wave are 100V (zero-to-peak) and 11.8 kHz, respectively. The measured displacement of the resonator is larger than 3μm. The optical performance of the dual-functioned optical device is also investigated. The average of measured insertion losses of the device is -1 ~ -1.1 dB, and the cross-talk is less than -60dB. Also, the measured switching time is less than 4 ms. The measured attenuation ranges are about -30 dB with an applied voltage of less than 20V.
Subjects
Resonator
RFSTM
optical switch
VOA
Type
thesis
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