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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Strain relaxation properties of InAsyP1-y metamorphic buffer layers for SWIR InGaAs photodetector
Details
Strain relaxation properties of InAsyP1-y metamorphic buffer layers for SWIR InGaAs photodetector
Journal
2018 7th International Symposium on Next Generation Electronics
Date Issued
2018
Author(s)
Hao-Kai Hsieh
Chieh Chou
Hao-Hsiung Lin
Jiunn-Jye Luo
Shao-Yi Li
HAO-HSIUNG LIN
DOI
10.1109/isne.2018.8394645
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/428871
SDGs
[SDGs]SDG7
Type
conference paper
