Effect of mechanical stress on characteristics of silicon thermal oxides
Journal
Japanese Journal of Applied Physics
Journal Volume
41
Journal Issue
1
Pages
81-82
Date Issued
2002
Author(s)
Abstract
The characteristics of silicon thermal oxides grown on silicon wafers under mechanical stress were discussed. It was found that the etch rate of SiO2 films grown under compressive stress was decreased. The capacitance-voltage (C-V) measurements showed that the interface state density of tensile sample was decreased and that of compressive sample was increased.
Subjects
Interface state density; Mechanical stress; Oxides
SDGs
Other Subjects
Capacitance; Compressive stress; Electric potential; Etching; Interfaces (materials); Semiconducting films; Semiconductor growth; Silicon wafers; Tensile properties; Mechanical stress; Semiconducting silicon compounds
Type
journal article