Room-temperature negative differential resistance in gate-tunable Weyl semimetal transistors
Journal
Results in Physics
Journal Volume
67
Start Page
108039
ISSN
2211-3797
Date Issued
2024-12
Author(s)
DOI
10.1016/j.rinp.2024.108039
Abstract
Negative differential resistance (NDR) has garnered substantial interest in propelling the progression of next-generation electronic devices. Weyl semimetals (WSMs) are a potential candidate for NDR devices; however, the NDR effect in WSMs has not been investigated. Here, we propose the gate-tunable transistor to theoretically develop the NDR effect in WSMs for the first time. The maximum peak-to-valley current ratio (PVR) of over 2 with a high current density peak at the NDR regime is observed with the help of the control gate and periodicity. Notably, it is demonstrated that the NDR effect can present stability for varying temperatures, even at room temperature, making the proposed device to be applied into practice. Finally, the NDR performances of the proposed devices are better than those of the present literature. Our findings highlight the potential of the NDR devices utilizing WSMs.
Subjects
Current density
Negative differential resistance
Peak-to-valley current ratio
Transistors
Tunable gate
Weyl semimetals
Publisher
Elsevier BV
Type
journal article