A novel TSV model considering nonlinear MOS effect for transient analysis
Journal
2012 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2012
Pages
49-52
Date Issued
2012
Author(s)
Abstract
A novel equivalent circuit model of through-silicon via (TSV) considering the time-dependent capacitance due to metal-oxide-semiconductor (MOS) effect has been proposed. This model can characterize the variance of capacitance between metal and silicon substrate caused by the differential change of depletion region width as the voltage applied on the TSV changes with time. Compared to conventional TSV models, the capacitance has a 70% difference when the TSV's applied voltage transits from low state to high state. Besides, 3% difference of eye height and 100% difference of eye jitter can be observed in eye diagram by SPICE simulation.
SDGs
Type
conference paper