Characterization of blue InGaN/GaN quantum-well heterojunction bipolar light emitting transistors
Journal
EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits
Journal Volume
2017-January
Pages
1��2��
Date Issued
2017
Author(s)
Abstract
The electrical and optical characteristics of the three port InGaN/GaN blue quantum-well heterojunction bipolar light-emitting transistors (QW HBLETs) on sapphire substrate are reported. The base-emitter (BE) light-emitting diode and base-collector (BC) diode are demonstrated. Next, the Gummel-poon plot is measured. Moreover, the collector current-voltage (I-V) and light-current-voltage (LI-V) characteristics demonstrate that the InGaN/GaN blue QW HBLETs are unique devices with dual output and have potential in the application of visible light communication (VLC).
SDGs
Type
conference paper