Design and fabrication of 4H-SiC lateral high-voltage devices on a semi-insulating substrate

Journal

IEEE Transactions on Electron Devices

Journal Volume

59

Journal Issue

3

Pages

754-760

Date Issued

2012

Author(s)

Lee, W.-S.

DOI

10.1109/TED.2011.2178028

URI

http://www.scopus.com/inward/record.url?eid=2-s2.0-84857645054&partnerID=MN8TOARS

http://scholars.lib.ntu.edu.tw/handle/123456789/369301

Type

journal article