The photophysical properties of the complexes containing third-row transition-metal and their applications in OLEDs.
Date Issued
2005
Date
2005
Author(s)
Hu, Ya-Hui
DOI
en-US
Abstract
Recently, strong phosphorescent organometallic compounds have been intensively investigated because of their potential applications in organic light-emitting devices (OLEDs). These materials, such as square-planar d8 complexes of PtIII and AuIII and octahedral d6 complexes of ReI, OsII, IrIII, and PtIV ions, commonly exhibit super- or long excited-state lifetimes and high luminescence efficiencies. Spin-orbital coupling, which is enhanced by the presence of heavy-metal ions incorporated at the core of these complexes, results in highly efficient intersystem crossing, as well as the breakdown of the spin-forbidden nature of phosphorescence. In addition, the stronger ligand field strength expected for these third-low elements makes the metal-centered d-d transitions relatively inaccessible from the lowest emitting state, so that the competing radiationless deactivation process may no longer play a crucial role in quenching the emission. As a result, much stronger room-temperature phosphorescence is normally observed in both the liquid and solid state.
The aim of this article is to present some intriguing photophysical properties of a series of OsII complesex that have the potentials in the application of OLEDs.
This thesis is organized as follows: we start in chapter 1 with a short introduction and general review of organic light emitting devices. Some instrumental setup and the methods for experiment that are likely to encounter while going through the whole thesis are then briefly discussed in chapter 2. We then consider in more details some of the OsII complexes including their photophysical properties, ligand field strength, ligand orientation effects, and their application in the OLEDs.
Subjects
系統間跨越
有機發光二極體
intersystem crossing
organic light-emitting devices
Type
thesis
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