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College of Science / 理學院
Applied Physics / 應用物理研究所
Interfacial self-cleaning in atomic layer deposition of HfO 2 gate dielectric on In 0.15 Ga 0.85 As
Details
Interfacial self-cleaning in atomic layer deposition of HfO 2 gate dielectric on In 0.15 Ga 0.85 As
Journal
Applied Physics Letters
Journal Volume
89
Pages
242911
Date Issued
2006
Author(s)
Chang, CH
Chiou, YK
Chang, YC
Lee, KY
Lin, TD
Wu, TB
MINGHWEI HONG
Kwo, J
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/323260
Type
journal article