Visible and band edge electroluminescence from indium tin oxide/SiO2/Si metal–oxide–semiconductor structures
Resource
Journal of Applied Physics 89 (1): 323-326
Journal
Journal of Applied Physics
Journal Volume
89
Journal Issue
1
Pages
323-326
Date Issued
2001
Date
2001
Author(s)
Abstract
Characteristics of electroluminescence from indium tin oxide (ITO)/SiO 2/Si metal-oxide-semiconductor (MOS) structures fabricated on both p-type and n-type Si wafers were investigated. The ITO/SiO 2/Si MOS on p-type Si could have both the visible and band edge electroluminescence, while the ITO/SiO 2/Si MOS on n-type Si has only band edge emission. The reason for the difference is attributed to the impact ionization that only occurs for ITO/SiO 2/Si(p) MOS. The study indicates that the band edge emission and visible luminescence are competing processes. The electroluminescence from ITO/SiO 2/Si(n) is also discovered to be less than that from the Al/SiO 2/Si(n). The reason is possibly due to the damage of the oxide bonding and the SiO 2/Si interface during the ITO sputtering. © 2001 American Institute of Physics.
Type
journal article
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