Characterization of the Ultrathin HfO2 and Hf-Silicate Films Grown by Atomic Layer Deposition
Resource
IEEE Transactions on Electron Devices 54 (4): 759-766
Journal
IEEE Transactions on Electron Devices
Journal Volume
54
Journal Issue
4
Pages
759-766
Date Issued
2007
Date
2007
Author(s)
Chen, Tze Chiang
Peng, Cheng-Yi
Tseng, Chih-Hung
Chen, Mei-Hsin
Tzeng, Pei-Jer
Abstract
The physical properties of and Hf-silicate layers grown by the atomic layer chemical vapor deposition are characterized as a function of the Hf concentration and the annealing temperature. The peaks of Fourier transform infrared spectra at 960, 900, and 820 originate from Hf–O–Si chemical bonds, revealing that a Hf-silicate interfacial layer began to form at the interface after postdeposition annealing process at 600 for 1 min. Moreover, the intensity of the peak at 750 can indicate the degree of crystallization of . The formed Hf-silicate layer between and is also confirmed by X-ray photoelectron spectroscopy.
Type
journal article
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