Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide
Journal
2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017
Date Issued
2017
Author(s)
Abstract
Ferroelectric HfZrOx (FE-HZO) negative capacitance (NC) FETs is experimentally demonstrated with physical thickness 1.5 nm after annealing 800°C for subthreshold swing (SS) < 60 mV/dec and hysteresis free. The relation between SS and FE-HZO thickness is also discussed. The NC-FinFET modeling is validated on standard 14nm FinFET. The feasible concept of coupling the polarization Hf-based oxide was applied, which were experimentally established with the validity of the negative capacitance effect. ? 2017 IEEE.
Subjects
Ferroelectricity; FinFET; Hafnium; VLSI circuits; Hysteresis free; Negative capacitance; Negative capacitance effect; Physical thickness; Sub-threshold swing(ss); Capacitance
SDGs
Type
conference paper