Measuring the electrical properties of semiconductor nanowires using terahertz conductivity spectroscopy
Journal
Proceedings of SPIE - The International Society for Optical Engineering
Journal Volume
8923
ISBN
9780819498144
Date Issued
2013-12-01
Author(s)
Joyce, Hannah J.
Docherty, Callum J.
Wong-Leung, Jennifer
Gao, Qiang
Paiman, Suriati
Tan, H. Hoe
Jagadish, C.
Lloyd-Hughes, James
Herz, Laura M.
Johnston, Michael B.
Abstract
Accurately measuring the electronic properties of nanowires is a crucial step in the development of novel semiconductor nanowire-based devices. With this in mind, optical pump-terahertz probe (OPTP) spectroscopy is ideally suited to studies of nanowires: it provides non-contact measurement of carrier transport and dynamics at room temperature. OPTP spectroscopy has been used to assess key electrical properties, including carrier lifetime and carrier mobility, of GaAs, InAs and InP nanowires. The measurements revealed that InAs nanowires exhibited the highest mobilities and InP nanowires exhibited the lowest surface recombination velocity. © 2013 Copyright SPIE.
Subjects
GaAs | III-V nanowires | InAs | InP | mobility | Semiconductor nanowires | surface recombination velocity | terahertz spectroscopy
Type
conference paper